![]() It generates a highly focused and confined plume of materials, resulting in reduced contamination during the deposition process 36, 37. Furthermore, PLD allows for the deposition of GaN thin films on temperature- sensitive substrates like plastics and polymers at low temperatures. High-power pulsed lasers facilitate high deposition rates, leading to faster GaN film growth. Consequently, PLD enables the deposition of GaN films with fewer defects and improved optical and electrical characteristics 35. By adjusting laser parameters such as fluence, pulse duration, and distance between target and substrate, stoichiometry of the deposited films can be precisely controled. Pulsed laser deposition (PLD) is capable of producing high-quality GaN thin films at lower growth temperatures compared to other deposition techniques like MOCVD and MBE 34. GaN is particularly utilized in the fabrication of high-power and high-temperature devices operating in the blue and ultraviolet wavelengths 31, 32, 33. Consequently, it finds widespread use in optoelectronic devices that necessitate a layer enabling fast carrier transport and a high breakdown voltage. ![]() Moreover, GaN possesses exceptional UV photoresponse, well-established mixing techniques, and the capability to operate effectively in high-temperature and challenging environments. GaN is characterized by excellent thermal stability, a small dielectric constant, high thermal conductivity, chemical inertness, radiation hardness, and a wide direct band gap of 3.4 eV 26, 27, 28, 29, 30. As a result, gallium nitride (GaN) stands out as the foundational material for the nitride class of III-nitride semiconductor materials, thanks to its superior thermodynamic stability 23, 24, 25. The next generation of photodiodes is expected to exhibit increased light absorption, photo-responsivity, and spectrum sensitivity 19, 20, 21, 22. In modern optoelectronics, the p–n junction photodiode is a fundamental component that is made by combining two semiconductor materials with different bandgaps and other properties, opening the door to novel functionalities and improved overall performance of optoelectronic devices (laser diodes, light-emitting diodes (LED), solar cells, and photodiodes) 13, 14, 15, 16, 17, 18. In order to produce a p–n junction photodiode, it is necessary to select a wavelength that minimises the background noise generated by the remainder of the spectrum 5, 6, 7, 8 as well as construct the photodiode's structure from a material that determines its adaptability in severe environments 9, 10, 11, 12. There are numerous uses for ultraviolet photodiodes, including environmental monitoring, optical communication, the detection of missiles, and space exploration 1, 2, 3, 4. Furthermore, the photodetector prepared at a temperature of 300 ☌ demonstrates a switching characteristic where the rise time and fall time are measured to be 363 and 711 μs, respectively. Similarly, at 575 nm, the responsivity is 19.86 AW −1, detectivity is 8.9 × 10 12 Jones, and the external quantum efficiency is 50.89%. The GaN/PSi heterojunction photodetector prepared at 300 ☌ exhibits the maximum performance, with a responsivity of 29.03 AW −1, detectivity of 8.6 × 10 12 Jones, and an external quantum efficiency of 97.2% at 370 nm. The photoluminescence emission peaks of the GaN/PSi prepared at 300 ☌ substrate temperature are located at 368 nm and 728 nm corresponding to energy gap of 3.36 eV and 1.7 eV, respectively. ![]() XRD studies reveal that the GaN films deposited on porous silicon are nanocrystalline with a hexagonal wurtzite structure along (002) plane. The structural and optical properties of GaN films as a function of substrate temperature are investigate. Table showing various pascal measurements converted to pounds per square inch.In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy, and various substrate temperatures raging from 200 to 400 ☌. Pascal to Pound per Square Inch Conversion Table Pressure in pounds per square inch are equal to the pound-force divided by the area in square inches. Pounds per square inch can be abbreviated as psi for example, 1 pound per square inch can be written as 1 psi. A pound per square inch is sometimes also referred to as a pound-force per square inch. The pound per square inch is a US customary and imperial unit of pressure. One pound per square inch is the pressure of equal to one pound-force per square inch.
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